ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-04-30 DOI:10.37681/2181-1652-019-x-2021-2-6

V. Odzhaev, A. N. Petlitsky, V. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V. Yavid, Yu. N. Yankovsky, G. Mavlyanov, B. Ismaylov, Z. Kenzhaev

引用次数: 0

Abstract

t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the environment

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光电二极管的电物理参数

在工作中发现，对于p-和- n-光电二极管的反向支路电流-电压特性，由于改变环境的术语密集程序，在25和70 V电压区域观察到步骤

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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