Threshold voltage roll-off model for low power bulk accumulation MOSFETs

Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372) Pub Date : 1998-09-13 DOI:10.1109/ASIC.1998.722889

B. Austin, X. Tang, J. Meindl, M. Dennen, W. Richards

引用次数: 4

Abstract

A closed-form analytical threshold voltage roll-off model (/spl Delta/V/sub T/) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 /spl mu/m range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA /spl Delta/V/sub T/ can be substantially smaller than the conventional surface channel inversion MOSFET /spl Delta/V/sub T/.

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低功率块积累mosfet的阈值电压滚降模型

本文推导了块积累型mosfet的闭式解析阈值电压滚转模型(/spl Delta/V/sub T/)，即埋藏沟道积累(BCA)和表面沟道积累(SCA)。结果表明，在保持性能的同时，将BCA/SCA器件缩放到L=0.1 /spl mu/m范围对于具有非常浅的槽和源/漏结的器件是可行的。还观察到，对于这种器件，SGA /spl Delta/V/sub T/可以大大小于传统的表面沟道反转MOSFET /spl Delta/V/sub T/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)

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