How the electro-optic probing system can contribute to LSI testing?

Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9) Pub Date : 1994-05-10 DOI:10.1109/IMTC.1994.352177

H. Takahashi, S. Aoshima, Y. Tsuchiya

{"title":"How the electro-optic probing system can contribute to LSI testing?","authors":"H. Takahashi, S. Aoshima, Y. Tsuchiya","doi":"10.1109/IMTC.1994.352177","DOIUrl":null,"url":null,"abstract":"The electro-optic (E-O) probing system using laser diode (LD) for measuring the voltage waveform at internal nodes of high speed LSI is described comparing performance to other electric instruments. The voltage sensitivity was improved by using an external ZnTe E-O probe and a low noise LD. Two kinds of E-O probing systems have been developed; a sampling system using a pulsed LD has the frequency bandwidth of 10 GHz and the minimum detectable voltage of 430 /spl mu/V/spl radic/Hz, and a real time system using a CW LD and a high speed photo detector has 480 MHz and 23 mV with 700 accumulations. Each system is based on mechanical prober and a microscope. Approach of the E-O probe to the electrode is computer-controlled. The advantages of high temporal resolution, noncontact and noninvasive method have realized measurements for microwave devices and passivated electrodes. Dependency of the output signal on the space between E-O probe and electrode is discussed as well as that on the electrode width.<<ETX>>","PeriodicalId":231484,"journal":{"name":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1994.352177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

The electro-optic (E-O) probing system using laser diode (LD) for measuring the voltage waveform at internal nodes of high speed LSI is described comparing performance to other electric instruments. The voltage sensitivity was improved by using an external ZnTe E-O probe and a low noise LD. Two kinds of E-O probing systems have been developed; a sampling system using a pulsed LD has the frequency bandwidth of 10 GHz and the minimum detectable voltage of 430 /spl mu/V/spl radic/Hz, and a real time system using a CW LD and a high speed photo detector has 480 MHz and 23 mV with 700 accumulations. Each system is based on mechanical prober and a microscope. Approach of the E-O probe to the electrode is computer-controlled. The advantages of high temporal resolution, noncontact and noninvasive method have realized measurements for microwave devices and passivated electrodes. Dependency of the output signal on the space between E-O probe and electrode is discussed as well as that on the electrode width.<>

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电光探测系统如何有助于大规模集成电路测试?

介绍了一种利用激光二极管(LD)测量高速LSI内部节点电压波形的电光探测系统，并将其性能与其他电子仪器进行了比较。采用外置ZnTe探针和低噪声LD提高了电压灵敏度。使用脉冲LD的采样系统的频率带宽为10 GHz，最小检测电压为430 /spl mu/V/spl radig /Hz，使用连续波LD和高速光电检测器的实时系统的频率为480 MHz和23 mV，累积次数为700次。每个系统都以机械探针和显微镜为基础。E-O探头接近电极的方式由计算机控制。该方法具有时间分辨率高、非接触、无创等优点，实现了对微波器件和钝化电极的测量。讨论了输出信号与电极间距以及电极宽度的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)

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