Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

2012 International Conference on Engineering and Technology (ICET) Pub Date : 2012-12-31 DOI:10.1109/ICENGTECHNOL.2012.6396158

L. Semra, A. Telia, M. Kaddeche, A. Soltani

引用次数: 4

Abstract

In this work Al_xIn_1-xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10^-6 C/cm²) to (-5.25×10^-6 C/cm²). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10^-6 C/cm²) to (10.85×10^-6 C/cm²). The calculated sheet carrier concentration is 6.3×10¹², 1.73, 2.88 and 4.08×10¹³cm^-2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.

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自发极化和压电极化对AlInN/GaN异质结构的影响

在这项工作中，AlxIn1-xN/GaN异质结构考虑了自发极化和压电极化对载流子浓度和合金成分的影响。发现压电极化从(14.8×10-6 C/cm2)减小到(-5.25×10-6 C/cm2)。当压电极化消失时，合金成分在x = 0.81和x = 0.82之间出现晶格匹配。诱导极化从(-14×10-6 C/cm2)到(10.85×10-6 C/cm2)不等。合金成分x = 0.75、0.80、0.85和0.90时，计算得到的载流子浓度分别为6.3×1012、1.73、2.88和4.08×1013cm-2。此外，还研究了载流子浓度上的阻挡层厚度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Engineering and Technology (ICET)

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