Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.571106

V. A. Bykovsky, V. I. Karas, V.F. Shoh, S. Strzelecka, A. Hruban, M. Gładysz

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Abstract

The electrical properties, photoluminescence and DLTS spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) has been investigated as functions of starting material properties, irradiation dose and thermal to fast neutron fluences-ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and formed nonradiative recombination centers, which are stable up to 700/spl deg/C.

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快中子对掺砷化镓中子嬗变复合及电学性能的影响

研究了中子嬗变掺杂(NTD)后LEC砷化镓晶体的电学性质、光致发光和DLTS光谱随起始材料性质、辐照剂量和热快中子通量比的变化规律。在中子辐照的砷化镓晶体中，残余碳受体与辐射诱导缺陷(RD)相互作用，形成非辐射复合中心，该中心在高达700/spl℃的温度下稳定存在。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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