Reactive Ion Beam Sputtered Molybdenum Oxide Thin Films for Optoelectronic Application

Abstract

Molybdenum oxide thin films were synthesized by reactive ion beam sputtering technique. The effect of deposition temperature and annealing on surface morphology, electrical and optical parameters of molybdenum oxide thin films and heterojunctions based on them were determined. In particular, obtained thin films exhibit photosensitive properties (photo-sensitivity coefficient is about 200 μA/1mV), heterojunctions based on them are characterized by the rectifying properties (rectification coefficient is almost 300 at applied voltage of 0.5V) and photovoltaic properties (open-circuit voltage is 215 mV and short-circuit current with one point contact is up to 2.4 mA).