Strained InGaAs/AlGaAs double quantum well laser with GRIN-SCH

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786068

C. Guoying, Ma Zuguang, Wang Xingqiao

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Abstract

Strained InGaAs/AlGaAs double quantum well lasers with two pairs of GRIN heterostructures have been fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD). Its wavelength ranges from 970 to 982 nm, threshold current density is 140 A/cm/sup 2/ at room temperature CW operation. 520 mw/facet and 1.49 w/facet for CW output optical power has been obtained under 0.9 A and 2.0 A operation, respectively. The maximum CW output optical power can come up to 2.4 w/facet.

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GRIN-SCH应变InGaAs/AlGaAs双量子阱激光器

采用金属-有机化学气相沉积(MOCVD)技术制备了两对GRIN异质结构的InGaAs/AlGaAs应变双量子阱激光器。其波长范围为970 ~ 982 nm，室温连续工作时的阈值电流密度为140 A/cm/sup 2/。在0.9 A和2.0 A下，连续波输出光功率分别为520 mw/facet和1.49 w/facet。最大连续波输出光功率可达2.4 w/facet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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