{"title":"An integrated optical receiver with wide-range timing discrimination characteristics","authors":"S. Kurtti, J. Kostamovaara","doi":"10.1109/ESSCIR.2005.1541653","DOIUrl":null,"url":null,"abstract":"An integrated receiver channel with a wide dynamic range for a pulsed time-of-flight laser rangefinder was designed and tested. The timing discriminator is realized so that the received unipolar pulse is converted to a bipolar signal at the front-end of the receiver channel, thus gain control and off-chip components are not needed. The walk error is 110 ps, or 16 mm in distance, over the dynamic range 1:1600. The minimum detectable signal is 1.52 /spl mu/A with the required SNR of 10. The circuit was implemented in a 0.35-/spl mu/m SiGe BiCMOS process.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
An integrated receiver channel with a wide dynamic range for a pulsed time-of-flight laser rangefinder was designed and tested. The timing discriminator is realized so that the received unipolar pulse is converted to a bipolar signal at the front-end of the receiver channel, thus gain control and off-chip components are not needed. The walk error is 110 ps, or 16 mm in distance, over the dynamic range 1:1600. The minimum detectable signal is 1.52 /spl mu/A with the required SNR of 10. The circuit was implemented in a 0.35-/spl mu/m SiGe BiCMOS process.