Dynamic fine-grain body biasing of caches with latency and leakage 3T1D-based monitors

Shrikanth Ganapathy, R. Canal, Antonio González, A. Rubio
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引用次数: 5

Abstract

In this paper, we propose a dynamically tunable fine-grain body biasing mechanism to reduce standby leakage power in first level data-caches under process variations. Accessed physical arrays are forward body biased (FBB) to improve latency while idle (unaccessed) arrays are reverse body biased (RBB) for reducing standby leakage power. The bias voltage to be applied is computed at design time and updated at run-time to counter the negative effects of process variations. This ensures that under all scenarios, the cache will consume the lowest leakage power for the target access latency computed at design-time. A sensor-like hardware mechanism measures the variation in latency and leakage at run-time and this measurement is used to update the bias voltage. The backbone of the hardware used for measurement is a three-transistor one-diode(3T1D)DRAM cell embedded into a regular cache array. By measuring the access and retention time of the 3T1D cell, we show that it is possible to classify cache arrays based on run-time latency/leakage profiles. Our technique reduces leakage energy consumption and access latency of the cache on an average by 20% & 18% respectively. Finally we show that our technique will improve parametric yield by a maximum of 38% for worst-case scenario.
具有延迟和泄漏的基于3t1d监视器的缓存的动态细粒度体偏置
在本文中,我们提出了一种动态可调的细颗粒体偏置机制,以降低工艺变化下一级数据缓存的待机泄漏功率。已接入的物理阵列采用FBB (forward body biased),以提高时延;空闲(未接入)的物理阵列采用RBB (reverse body biased),以降低待机泄漏功率。要施加的偏置电压在设计时计算,并在运行时更新,以抵消工艺变化的负面影响。这确保了在所有场景下,缓存在设计时计算的目标访问延迟将消耗最低的泄漏功率。类似传感器的硬件机制测量运行时延迟和泄漏的变化,并使用该测量来更新偏置电压。用于测量的硬件的骨干是一个嵌入到常规缓存阵列中的三晶体管单二极管(3T1D)DRAM单元。通过测量3T1D单元的访问和保留时间,我们表明可以根据运行时延迟/泄漏概况对缓存阵列进行分类。我们的技术将缓存的泄漏能耗和访问延迟平均分别降低了20%和18%。最后,我们表明,在最坏的情况下,我们的技术将使参数产率提高38%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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