Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

Abstract

Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200degC on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400degC) can preserve the atomically flatness at the gate insulator film/silicon interface. CMOSFET having the atomically flat interface exhibit extremely lower 1/f noise and higher mobility characteristics with smaller electrical variation than those of CMOSFETs fabricated by the conventional technologies.