MOSFET modeling for RF circuit design

Yuhua Cheng, Chih-Hung Chen, C. Enz, M. Matloubian, M. Deen
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引用次数: 14

Abstract

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integrated-circuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and f/sub T/ characteristics. Good model accuracy is achieved against the measurements for a 0.25 /spl mu/m RF CMOS technology. The high frequency (HF) noise modeling issues are also discussed. A methodology to extract the channel thermal noise of MOSFETs from the HF noise measurements is presented and the concept of induced-gate noise is discussed briefly. The results of different noise modeling approaches are also given with the comparison of the measured data, with which the prediction capability of the HF noise behavior of any modeling approach can be examined.
用于射频电路设计的MOSFET建模
本文讨论了射频(RF)集成电路(IC)设计中MOSFET建模中的一些重要问题。我们首先介绍射频建模的基础知识。给出了一个简单的子电路模型,并对y参数和f/sub T/特性的数据进行了比较。对于0.25 /spl mu/m RF CMOS技术的测量,实现了良好的模型精度。讨论了高频噪声的建模问题。提出了一种从高频噪声测量中提取mosfet通道热噪声的方法,并简要讨论了感应栅噪声的概念。给出了不同噪声建模方法的结果,并与实测数据进行了比较,从而检验了各种建模方法对高频噪声特性的预测能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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