{"title":"Comparison of sampler and VNA based Large Signal Measurement Systems (LSNA) under CW and pulsed operation","authors":"M. Casbon, P. Tasker","doi":"10.1109/ARFTG.2015.7162890","DOIUrl":null,"url":null,"abstract":"Here we present a comparison of the Large Signal Measurements provided by both a VNA based and a sampler based LSNA system. In this study, in order to achieve a robust and reliable relative phase calibration a dual frequency phase differential method was used. Significantly this work compares measurements performed under both CW and pulse mode operation. Very similar RF I-V waveforms are achieved in both cases, verifying that both architectures can provide comparable measurements not only in CW but also under pulsed operation. The test device was a GaN on silicon carbide HFET.","PeriodicalId":228314,"journal":{"name":"2015 85th Microwave Measurement Conference (ARFTG)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 85th Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2015.7162890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Here we present a comparison of the Large Signal Measurements provided by both a VNA based and a sampler based LSNA system. In this study, in order to achieve a robust and reliable relative phase calibration a dual frequency phase differential method was used. Significantly this work compares measurements performed under both CW and pulse mode operation. Very similar RF I-V waveforms are achieved in both cases, verifying that both architectures can provide comparable measurements not only in CW but also under pulsed operation. The test device was a GaN on silicon carbide HFET.