Annealing characteristics of native defects in low-temperature-grown MBE GaAs

Abstract

Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.