Build-up electrical insulation material for high speed & high-frequency

T. Kunikawa, T. Tanaka, H. Kouyanagi, K. Shirahase
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Abstract

The demand for high performance build-up electrical insulation materials, used in IC package substrates, is increasing due to ever-increasing speed signal processing and density of LSIs due to requirement for faster information and communication equipment in recent years. These LSIs with signal travelling at high speeds also causes GHz band signal to travel through the package substrate. If the dielectric loss tangent of the insulation material is large, not only will it lead to high signal losses, it will also cause other problems such as increase in heat releases. Furthermore, GHz band signal travelling at high speed causes large transmission losses at the surface of the conductor due to skin effect and this is especially true when the surface smoothness of the conductor is rough triggering a signal delay. To countermeasure these problems, build up insulation material that has both low dielectric loss tangent and enables smoother conductor surfaces after processing, was developed achieving very low signal loss of -1.38dB/inch at 10GHz using microstrip line. Here we report the result of the low transmission loss of the newly developed material by microstrip line and the successful result of isolating the effect of low dielectric loss tangent and conductor smoothness that affect transmission loss. Finally we report a novel insulation material that achieves further low transmission loss by having dielectric loss tangent of 0.004 level with conductor surface roughness of less than 100 nm.
用于高速和高频的电气绝缘材料
近年来,由于对更快的信息和通信设备的要求,对用于IC封装基板的高性能累积电绝缘材料的需求正在增加,这是由于信号处理速度和lsi密度的不断提高。这些信号高速传输的lsi也会导致GHz频段信号穿过封装基板。如果绝缘材料的介电损耗正切较大,不仅会导致高信号损耗,还会引起热释放增加等其他问题。此外,由于趋肤效应,高速传输的GHz频段信号在导体表面会造成很大的传输损耗,特别是当导体表面光滑度较差时,会引发信号延迟。为了解决这些问题,我们开发了一种绝缘材料,该材料既具有低介电损耗切线,又具有加工后更光滑的导体表面,使用微带线在10GHz下实现了-1.38dB/inch的极低信号损耗。本文报道了利用微带线实现新材料低传输损耗的结果,并成功地隔离了影响传输损耗的低介电损耗正切和导体平滑度的影响。最后,我们报道了一种新型绝缘材料,该材料的介电损耗正切为0.004级,导体表面粗糙度小于100 nm,从而进一步降低了传输损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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