The hierarchical h-adaptive 3-D boundary element computation of VLSI interconnect capacitance

Jinsong Hou, Zeyi Wang, Xianlong Hong
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引用次数: 12

Abstract

In deep submicron VLSI circuits, the interconnect parasitic capacitance is a very important factor determining circuit performances such as power and time-delay. The Boundary Element Method (BEM) is an effective tool for solving Laplacian's equation applied in the parasitic capacitance extraction. In this paper, a hierarchical h-adaptive BEM is presented. It constructs a 3-D linear hierarchical shape function based on a constant boundary element and uses previous computations and solutions. Hence, it reduces computation significantly in the adaptive procedure. Besides, a combination of a residual-type estimator and reduced Z-Z error estimator for more reliable and efficient estimation of error is presented. Some numerical results show that this method is effective.
VLSI互连电容的分层自适应三维边界元计算
在深亚微米VLSI电路中,互连寄生电容是决定电路功率和时延等性能的重要因素。边界元法(BEM)是求解寄生电容提取中拉普拉斯方程的有效工具。本文提出了一种层次h自适应边界元算法。它构造了一个基于常量边界元的三维线性分层形状函数,并利用已有的计算和解。因此,在自适应过程中大大减少了计算量。此外,本文还提出了残差型估计器与简化Z-Z误差估计器的结合,以获得更可靠、更有效的误差估计。数值结果表明,该方法是有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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