Progress and Advancements in Tunnel FET Technology

Abstract

This paper presents a detailed discussion on the structures, performances, advantages, and limitations of tunnel field-effect transistors (TFETs). The paper includes a comparative study of the performances of conventional metal-oxide-semiconductor FETs (MOSFETs) and TFETs. The paper describes the electrical characteristics of TFETs and explores various recently reported architectures and approaches to improve the device performances.