{"title":"Analysis and design of ESD protection circuits for high-frequency/RF applications","authors":"C. Ito, K. Banerjee, R. Dutton","doi":"10.1109/ISQED.2001.915215","DOIUrl":null,"url":null,"abstract":"Electrostatic discharge (ESD) protection devices can have an adverse effect on the performance of high frequency and RF circuits. This work presents for the first time, an S-parameter based analysis of the performance of RF circuits with various ESD protection designs. Additionally, a design methodology for distributed ESD protection using coplanar waveguides is developed to achieve a better impedance match over a broad frequency range. By using this technique, an ESD device with a parasitic capacitance of 200 fF will attenuate the signal power by only 0.27 dB at 10 GHz.","PeriodicalId":110117,"journal":{"name":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2001.915215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
Electrostatic discharge (ESD) protection devices can have an adverse effect on the performance of high frequency and RF circuits. This work presents for the first time, an S-parameter based analysis of the performance of RF circuits with various ESD protection designs. Additionally, a design methodology for distributed ESD protection using coplanar waveguides is developed to achieve a better impedance match over a broad frequency range. By using this technique, an ESD device with a parasitic capacitance of 200 fF will attenuate the signal power by only 0.27 dB at 10 GHz.