Advanced FDSOI design: The U-channel device for 7nm node and beyond

Abstract

Planar ultra-thin body and box (UTBB1–3) fully depleted silicon on insulator (FDSOI) devices have many advantages for future low-cost energy-efficient applications. However, process steps for scaling to ultra-thin FDSOI devices can be difficult to control, and extrinsic resistance can hinder any performance improvement. In this paper, we present a novel planar U-channel UTBB FDSOI device that can alleviate these problems.