{"title":"Interaction of threshold voltage and mobility temperature dependencies applied to stabilization of current and voltage","authors":"I. Filanovsky, Su-Tarn Lim","doi":"10.1109/MWSCAS.2000.951390","DOIUrl":null,"url":null,"abstract":"Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient (ZTC) bias point of an MOS transistor. In this case the temperature dependence of the output voltage for a diode-connected transistor is a linear function of absolute temperature with the slope controlled by bias current. The paper describes application of this temperature dependence to stabilization of current and voltage in reference circuits. Examples of design for 0.18 /spl mu/m CMOS technology, and the circuit simulations are provided.","PeriodicalId":437349,"journal":{"name":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2000.951390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient (ZTC) bias point of an MOS transistor. In this case the temperature dependence of the output voltage for a diode-connected transistor is a linear function of absolute temperature with the slope controlled by bias current. The paper describes application of this temperature dependence to stabilization of current and voltage in reference circuits. Examples of design for 0.18 /spl mu/m CMOS technology, and the circuit simulations are provided.
迁移率和阈值电压温度变化的相互补偿可能导致MOS晶体管的零温度系数(ZTC)偏置点。在这种情况下,二极管连接晶体管的输出电压的温度依赖性是绝对温度的线性函数,其斜率由偏置电流控制。本文描述了这种温度依赖性在稳定参考电路中的电流和电压中的应用。给出了0.18 /spl μ m CMOS工艺的设计实例,并进行了电路仿真。