Efficient TSV Fault Detection Scheme For High Bandwidth Memory Using Pattern Analysis

K. Bae, Jongsun Park
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引用次数: 1

Abstract

For an efficient data transmission between logic die and core die in HBM DRAM, Through-Silicon-Via (TSV) is an essential part that connects stacked memories. TSV is a vertical component which cannot be found in the conventional 2D memory. It plays an important role in improving integration in 3D memory structure. However, due to its temporal variation and technological weakness, error cases occur frequently in TSV. Following this, to increase the reliability of the memory operation, fault detection and correction method for TSV is a new challenge in 3D memory. For the efficient fault correction, fault detection method that classifies hard fault and soft error has been studied. In this paper, a new TSV fault detection method using error pattern analysis will be presented. As a result, the proposed scheme shows higher detection success rate with low area overhead, compared to the conventional scheme.
基于模式分析的高带宽内存TSV故障检测方案
为了在HBM DRAM的逻辑芯片和核心芯片之间实现高效的数据传输,TSV (through silicon - via)是连接堆叠存储器的关键部件。TSV是一种在传统二维存储器中找不到的垂直分量。它对提高三维记忆结构的集成度具有重要作用。然而,由于时间的变化和技术的薄弱,在TSV中经常发生错误。因此,为了提高存储器运行的可靠性,TSV的故障检测与校正方法是三维存储器领域的一个新挑战。为了有效地纠正故障,研究了硬故障和软错误分类的故障检测方法。本文提出了一种基于误差模式分析的TSV故障检测方法。结果表明,与传统方案相比,该方案具有较高的检测成功率和较低的面积开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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