Potential Applicability of Single-Walled Carbon Nanotube Through-Silicon Vias for Differential Signal Transmission

Abstract

Circuit model for vertically aligned carbon nanotube (CNT) array-filled differential through-silicon vias (DTSVs) is presented and investigated. The frequency-dependent impedance is extracted by using partial-element equivalent-circuit (PEEC) method. Based on the circuit model, the electrical performance of the proposed D-TSVs is investigated.