Comparison of ns and sub-ns laser conditioning of KDP and DKDP crystals for high power lasers

C. Maunier, B. Bertussi, D. Damiani, T. Donval, G. Duchateau, A. Dyan, G. Gaborit, L. Lamaignère, X. Leborgne, M. Loiseau, H. Mathis, G. Razé
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引用次数: 6

Abstract

In this paper, we present various laser conditioning experiments which have been performed with KDP SHG and DKDP THG samples. The different conditioning facilities used delivered laser pulses at 351 nm in the nanosecond (from 3 to 12 ns) or in the sub-ns (600 ps) regime. Finally, the efficiency of the various conditioning protocols was compared: 526 nm-6 ns and 351 nm-3 ns damage tests were performed respectively on SHG and THG samples. The results show that laser-conditioning SHG KDP samples at 351 nm either with ns or sub-ns pulses allows reducing the laser damage density so that it becomes consistent with the specification of high power lasers. They also confirm that conditioning THG DKDP samples at 351 nm using sub-ns pulses is more efficient than using ns pulses.
高功率激光中KDP和DKDP晶体的ns和sub-ns激光调理比较
本文介绍了用KDP SHG和DKDP THG样品进行的各种激光调理实验。所使用的不同调理设备以纳秒(从3到12纳秒)或次纳秒(600秒)的方式输出351nm的激光脉冲。最后,比较了不同调节方案的效率,分别对SHG和THG样品进行了526 nm-6 ns和351 nm-3 ns的损伤试验。结果表明,在351nm处用ns或亚ns脉冲对SHG - KDP样品进行激光调理,可以降低激光损伤密度,使其符合高功率激光器的要求。他们还证实,在351nm下使用亚毫微米脉冲比使用毫微米脉冲更有效地调节THG DKDP样品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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