P. Hurwitz, S. Chaudhry, E. Preisler, R. Kanawati, M. Racanelli
{"title":"Foundry technology for RF and high performance analog applications","authors":"P. Hurwitz, S. Chaudhry, E. Preisler, R. Kanawati, M. Racanelli","doi":"10.1109/VLSI-TSA.2014.6839697","DOIUrl":null,"url":null,"abstract":"The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modular platform with accurate RF models for first-pass design success in demanding applications that stress speed, voltage and noise requirements. In this paper we present examples of such technologies focusing on two areas of particular recent interest: silicon technology for the front-end module of wireless handsets and high-speed SiGe BiCMOS technology serving high-speed networks and mmWave wireless applications.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2014.6839697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modular platform with accurate RF models for first-pass design success in demanding applications that stress speed, voltage and noise requirements. In this paper we present examples of such technologies focusing on two areas of particular recent interest: silicon technology for the front-end module of wireless handsets and high-speed SiGe BiCMOS technology serving high-speed networks and mmWave wireless applications.