Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Abstract

A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.