InP HBT/GaN HEMT/Si CMOS heterogeneous integrated Q-band VCO-amplifier chain

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2015-05-17 DOI:10.1109/RFIC.2015.7337699

Yi-Cheng Wu, Monte K. Watanabe, T. LaRocca

引用次数: 11

Abstract

A Q-band DAHI (Diverse Accessible Heterogeneous Integration) multi-technology VCO-amplifier chain is presented. The DAHI integration process is composed of InP HBT, GaN HEMT and 65nm CMOS. The InP VCO demonstrated 2GHz of tuning range at 35GHz while the GaN amplifier provides 15dB gain.

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InP HBT/GaN HEMT/Si CMOS异质集成q波段vco放大器链

提出了一种q波段多元可及异构集成(DAHI)多技术vco放大器链。DAHI集成工艺由InP HBT、GaN HEMT和65nm CMOS组成。InP VCO在35GHz时的调谐范围为2GHz，而GaN放大器提供15dB增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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