New insights into breakdown modes and their evolution in ultra-thin gate oxide

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 1900-01-01 DOI:10.1109/VTSA.2001.934477

H. Lin, D. Lee, C. Lee, T. Chao, T. Huang, T. Wang

引用次数: 11

Abstract

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device's switching behavior are also discussed.

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超薄栅极氧化物击穿模式及其演变的新见解

通过仔细分析MOS器件击穿后的电流-电压特性，发现薄于3nm的氧化物器件通常诱导的软击穿模式与厚于3nm的氧化物器件有很大的不同。在此基础上，提出了一个统一的模型来解释不同击穿模式的演化。还讨论了每次击穿对器件开关行为的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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