{"title":"Shared data line technique for doubling the data transfer rate per pin of differential interfaces","authors":"F. Hatori, S. Kousai, Y. Unekawa","doi":"10.1109/CICC.2001.929830","DOIUrl":null,"url":null,"abstract":"A technique for almost doubling the data transfer rate per pin of the differential interfaces has been proposed. In this technique the number of the differential transmission lines between transmitter LSI and the receiver LSI are shared with adjacent buffers to increase the transfer rate per pin. Each receiver consists of two comparators and a decoder circuit translates the signal voltage at the receiver end of the transmission line into digital data. A data rate of 1.1 Gbps/pin has been achieved in the fabricated test circuit in CMOS technology.","PeriodicalId":101717,"journal":{"name":"Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2001.929830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A technique for almost doubling the data transfer rate per pin of the differential interfaces has been proposed. In this technique the number of the differential transmission lines between transmitter LSI and the receiver LSI are shared with adjacent buffers to increase the transfer rate per pin. Each receiver consists of two comparators and a decoder circuit translates the signal voltage at the receiver end of the transmission line into digital data. A data rate of 1.1 Gbps/pin has been achieved in the fabricated test circuit in CMOS technology.