S. L. Chua, A. Razzaq, K. H. Wee, K. Li, H. Yu, C. Tan
{"title":"3D CMOS-MEMS stacking with TSV-less and face-to-face direct metal bonding","authors":"S. L. Chua, A. Razzaq, K. H. Wee, K. Li, H. Yu, C. Tan","doi":"10.1109/VLSIT.2014.6894410","DOIUrl":null,"url":null,"abstract":"CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium leak tests. The stacked CMOS/MEMS chip is verified to be functional and sustains shock test of 500g.","PeriodicalId":105807,"journal":{"name":"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2014.6894410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium leak tests. The stacked CMOS/MEMS chip is verified to be functional and sustains shock test of 500g.