Single electron transistor realised by suspended carbon nanotube

Abstract

We have studied about single electron transistor realized by a suspended carbon nanotube. A detailed analysis of a single frequency resonance dip has shown that a broadening is obtained increasing the source drain voltage. Some of the observed effects in terms of a model in which the gate voltage acquires assigned time dependence. This phenomenological model, the back action of the nanotube motion on detected current was observed. Neglecting the dynamics of the resonator analysed the problem directly at mechanical resonance conditions only in the limit of small external antenna amplitudes in the linear response regime. We have observed that increasing the temperature the nonlinear effects in the current frequency response were washed out as a result of the increase of the intrinsic damping of the resonator and of the reduction of the intrinsic nonlinear terms of the effective self consistent force.