Optimization of a cathode configuration in gas insulated switchgear with a permittivity graded insulator

C. Gu, J. Rhee, Heung-Jin Ju, K. Ko
{"title":"Optimization of a cathode configuration in gas insulated switchgear with a permittivity graded insulator","authors":"C. Gu, J. Rhee, Heung-Jin Ju, K. Ko","doi":"10.1109/IPMHVC.2012.6518833","DOIUrl":null,"url":null,"abstract":"An application of a functionally graded material (FGM) to the solid spacer in gas insulated switchgears (GISs) can reduce the electric field intensity. Especially, the location of the high electric field concentration moves from the anode to the interface between the spacer and the gas, when the FGM spacer is used. However, the electric field stress near the triple junction of the cathode with a rounded shape, which remarkably affects the insulation capability of a GIS, increases reversely. Therefore, in order to prevent this, it is necessary to modify the cathode geometry in the common C-GIS. In this research, we dug a groove in the cathode near the triple junction, and performed the optimization of this cathode configuration by using the design of experiments (DOE). Additionally, the permittivity graded spacer with the permittivity variation of a reverse direction distribution unlike that of the existing unidirectional or bidirectional distribution was applied. Consequently, both the maximum electric field intensity generating near the inflection point of the spacer geometry and the electric field stress near the triple junction of the cathode can be efficiently reduced by using the FGM spacer and designing the optimal cathode shape.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPMHVC.2012.6518833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

An application of a functionally graded material (FGM) to the solid spacer in gas insulated switchgears (GISs) can reduce the electric field intensity. Especially, the location of the high electric field concentration moves from the anode to the interface between the spacer and the gas, when the FGM spacer is used. However, the electric field stress near the triple junction of the cathode with a rounded shape, which remarkably affects the insulation capability of a GIS, increases reversely. Therefore, in order to prevent this, it is necessary to modify the cathode geometry in the common C-GIS. In this research, we dug a groove in the cathode near the triple junction, and performed the optimization of this cathode configuration by using the design of experiments (DOE). Additionally, the permittivity graded spacer with the permittivity variation of a reverse direction distribution unlike that of the existing unidirectional or bidirectional distribution was applied. Consequently, both the maximum electric field intensity generating near the inflection point of the spacer geometry and the electric field stress near the triple junction of the cathode can be efficiently reduced by using the FGM spacer and designing the optimal cathode shape.
带介电常数梯度绝缘子的气体绝缘开关设备阴极结构的优化
将功能梯度材料(FGM)应用于气体绝缘开关装置(GISs)的固体间隔层可以降低电场强度。特别是,当使用FGM隔离器时,高电场浓度的位置从阳极移动到隔离器与气体之间的界面。而圆形阴极三结附近的电场应力反而增大,对GIS的绝缘性能有显著影响。因此,为了防止这种情况,有必要修改普通C-GIS中的阴极几何形状。在本研究中,我们在阴极靠近三结处挖一个槽,并利用实验设计(DOE)对阴极结构进行了优化。此外,还采用了介电常数梯度间隔器,其介电常数变化与现有的单向或双向分布相反。因此,通过使用FGM间隔片和设计最佳阴极形状,可以有效地降低间隔片几何拐点附近产生的最大电场强度和阴极三结附近的电场应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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