Multi-domain characterization of semiconductor devices

A. Poppe
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Abstract

Today thermal issues are among the main bottlenecks of microelectronics and solid-state lighting. Mitigation to thermal problems of ICs is provided either by new, more efficient cooling technologies or by thermal aware design tools, including electro-thermal or logi-thermal simulation. In solid-state lighting the situation is somewhat similar: replacement of high-intensity discharge lamps is still hampered by cooling problems. In case of LEDs not only the thermal and electrical operation of the diode is to be modeled and simulated - the electro-thermal behavior also needs to be tightly coupled to modeling and simulation of the light output, hence, a real multi-domain characterization from measurements on component level to simulation on system level is required. This paper aims to provide an overview of measurement, modeling and simulation techniques in which the semiconductor devices are characterized in all of their relevant operating domains in a self-consistent way.
半导体器件的多域特性
今天,热问题是微电子和固态照明的主要瓶颈之一。通过新的、更高效的冷却技术或热感知设计工具,包括电热或逻辑热模拟,可以缓解集成电路的热问题。固态照明的情况也有些类似:更换高强度放电灯仍然受到冷却问题的阻碍。对于led而言,不仅要对二极管的热学和电学操作进行建模和仿真,电热行为也需要与光输出的建模和仿真紧密耦合,因此,需要从组件级的测量到系统级的仿真进行真正的多域表征。本文旨在提供测量,建模和仿真技术的概述,其中半导体器件以自一致的方式在其所有相关操作域中具有特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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