GaN HEMTs Design and Modeling for 5G

Abstract

As GaN on SiC technology becomes accessible to commercial users for 5G applications, modeling needs from transistor to system level has become a big challenge for designers. In this work we demonstrated the strategy of using multi-physics modeling for a high power GaN HEMT PA design to achieve the stringent design target goal on the product level. The simulation result shows excellent agreement between measurements and models. Meanwhile, to facilitate the design process at system level, behavioral modeling is used to predict module level performance by integrating models in complex signal scheme environment. The final product used with Wolfspeed's 5G targeted process with reliability test validity is demonstrated in the paper as well.