B. Coquillas, E. Kerhervé, E. Itcia, L. Roussel, B. Louis, T. Merlet
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引用次数: 2
Abstract
This paper presents the first efficient Ku-Band SiGe cascode power amplifier (PA) with a highly robust power combination to the active SWR. Two twisted couplers distribute 70.2um2 emitter area in a balanced architecture to achieve reduced impedance transformation through baluns. As proof of concept, the PA was simulated with the 0.13-um SiGe BiCMOS technology. The post layout simulations show a saturated power (Psat) of 25.6dBm and a peak PAE of 30% at 18GHz and 90°C. With a 2:1 SWR the PAE and Pout drop less than 5.5% and 1.1dBm, respectively.
本文提出了首个高效ku波段SiGe级联码功率放大器(PA),对有源SWR具有高鲁棒性的功率组合。两个双绞耦合器在平衡结构中分配70.2um2的发射极面积,通过平衡器实现减少阻抗变换。作为概念验证,使用0.13 um SiGe BiCMOS技术对PA进行了仿真。后布局仿真表明,在18GHz和90°C下,饱和功率(Psat)为25.6dBm,峰值PAE为30%。当SWR为2:1时,PAE和Pout的降幅分别小于5.5%和1.1dBm。