The Selective Detecting of the Sub-mm Band Irradiation by the Diplon System in Superfluid Helium Film

V. A. Nikolaenko, A. Pashchenko
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Abstract

The modern nano-technologies give a new glance on apply some physical effects and models to practice realization. One of them is the surface electrons system over either the superfluid helium or over the helium film on the dielectric substrate. Modulation of the substrate properties by the positive ions beneath film with surface electrons lead to form the diplon system and to creating in its parabolic potential wells the electron quantum dots with the correspondently energy spectrum in the surface direction. The energy spectrum of quantum dot depends from both the helium film thickness and the outer pressing electric field. For the selective detecting of the sub-mm band of irradiation the harmonic spectrum of the diplon system is considered. Stimulated by irradiation the transition between a surface electron states in the diplon system changes the local potential is fixed by the sensitive chips. The possibility of the implementation device the selective detecting of irradiation is considered and the device composition is given.
超流氦膜中双介子系统对亚毫米波段辐射的选择性探测
现代纳米技术为将一些物理效应和模型应用于实际实现提供了新的视角。其中一个是表面电子系统在超流氦上或者在介电基底上的氦膜上。薄膜下的正离子与表面电子对衬底性质的调制导致了双介子系统的形成,并在其抛物势阱中产生了在表面方向具有相应能谱的电子量子点。量子点的能谱与氦膜厚度和外压电场有关。考虑了双介子系统的谐波谱对亚毫米辐照波段的选择性探测。在辐照的刺激下,双介子系统中表面电子态之间的跃迁发生了变化,局部电势由敏感芯片固定。考虑了该装置实现辐照选择性检测的可能性,并给出了装置组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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