Hydride vapour phase epitaxial regrowth of SI-InP: Fe on non-planar surfaces for device fabrication

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752688

S. Lourdudoss, O. Kjebon

引用次数: 3

Abstract

The salient features of Hydride Vapour Phase Epitaxial growth of semi insulating InP:Fe on non-planar surfaces such as high growth rate, selectivity, planarity and growth behaviour insensitive either to the mesa dimension or orientation have been demonstrated. We have also exemplified its usefulness by fabricating high speed GaInAsP/InP lasers exhibiting a 3dB frequency exceeding 14 GHz.

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非平面表面上SI-InP: Fe的氢化物气相外延再生

证明了半绝缘InP:Fe在非平面表面上的氢化物气相外延生长的显著特征，如高生长速率、选择性、平面性和对台面尺寸或取向不敏感的生长行为。我们还通过制造频率超过14 GHz的3dB高速GaInAsP/InP激光器来证明其实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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