4-port RF performance assessment and compact modeling of UTBB-FDSOI transistors

Abstract

RF small-signal performances of Ultra-Thin Body and Box FDSOI transistors are evaluated using state-of-the-art 4-port characterization in the 100MHz-24GHz frequency range. Front-Gate cut-off frequencies and related figures of merit are extracted to assess the capabilities of the technology at 28 nm technology node for RF applications. Back-Gate cut-off frequency is also extracted and shown to be in the 80GHz range, while front-gate cut-off is higher than 380GHz. A 4-port S-parameter RF extraction for a SPICE model featuring gate width scalability is described.