Extending HDP for STI fill to 45nm with IPM

Abstract

A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45 nm node and beyond, with established HDP CVD film properties and integration. In this paper, the key aspects of the IPM process, deposition, etch, in-film fluorine and aluminum control are discussed to provide better understanding on gap fill optimization and manufacturing capability.