A low power, area efficient limiting amplifier in 90nm CMOS

F. Tavernier, M. Steyaert
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引用次数: 8

Abstract

A low power limiting amplifier with area efficient offset compensation in 90nm CMOS is presented. The large time constant needed in the offset compensation feedback loop is boosted by an inverting amplifier to reduce the chip area. On top of this, to reduce the chip area even more, negative capacitors are applied to increase the bandwidth instead of making use of the inductive peaking technique. The proposed circuit has a small-signal gain of 35dB and a bandwidth of 4.15GHz. The input sensitivity for a BER of 10−12 is 2.75mV, 2.9mV and 3.75mV for a bitrate of 3, 4 and 5Gbit/s respectively. The power consumption is only 14.7mW and the area of the circuit is 0.12mm2.
一种低功耗、面积高效的90nm CMOS限幅放大器
提出了一种具有面积有效失调补偿的低功率限制放大器。偏移补偿反馈回路所需的大时间常数由反相放大器提高,以减小芯片面积。在此基础上,为了进一步减小芯片面积,采用负电容来增加带宽,而不是利用感应峰值技术。该电路的小信号增益为35dB,带宽为4.15GHz。当比特率为3,4和5Gbit/s时,BER为10−12时的输入灵敏度分别为2.75mV、2.9mV和3.75mV。功耗仅为14.7mW,电路面积为0.12mm2。
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