The probe marker discoloration on Al pad and wafer storage

W. Hsieh, Henry Lin, Vincent Chen, Irene Ou, Y. Lou
{"title":"The probe marker discoloration on Al pad and wafer storage","authors":"W. Hsieh, Henry Lin, Vincent Chen, Irene Ou, Y. Lou","doi":"10.1109/IPFA47161.2019.8984909","DOIUrl":null,"url":null,"abstract":"In this report, a novel probe marker discoloration corrosion on Al pad, with donut/circle shape, was found. This probe marker discoloration corrosion was found at the stage of blue tape. Back to check the wafer process, no clear corrosion was found before CP probing test. In order to identify the microstructure & components of this probe marker discoloration corrosion, SEM/EDS, TEM/EELS & AES analysis were applied. These structure & surface analysis results indicated this discoloration is a combination of Aluminum, Fluorine and Oxygen. No Fluoride was detected on the normal region of Al pad. All these results implied the role of fluorine element to induce this probe marker discoloration corrosion. The source of F element is critical in this case, so the testing and storage conditions would be supposed to be important for the formation of probe marker discoloration corrosion. The HAST testing with condition of temperature 130°C and RH 85% for 21 hours, all the chip samples were simulated to have been exposed in air without N2 cabinet storage or MBB bag storage for 1 year. This HAST test result showed none of exhibition of discoloration or existed discoloration chips being deteriorated. Another storage test based on regular full wafer FOSB storage showed existed discoloration chips being deteriorated. This FOSB storage test indicated the source of corrosive F element maybe come from wafer itself. The EDS element mapping data indicated the F element enriched Al pad on wafer extreme edge area was clearly identified. The source of F element was found. And the storage of processed wafer would play a key role in the formation of discoloration corrosion.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

In this report, a novel probe marker discoloration corrosion on Al pad, with donut/circle shape, was found. This probe marker discoloration corrosion was found at the stage of blue tape. Back to check the wafer process, no clear corrosion was found before CP probing test. In order to identify the microstructure & components of this probe marker discoloration corrosion, SEM/EDS, TEM/EELS & AES analysis were applied. These structure & surface analysis results indicated this discoloration is a combination of Aluminum, Fluorine and Oxygen. No Fluoride was detected on the normal region of Al pad. All these results implied the role of fluorine element to induce this probe marker discoloration corrosion. The source of F element is critical in this case, so the testing and storage conditions would be supposed to be important for the formation of probe marker discoloration corrosion. The HAST testing with condition of temperature 130°C and RH 85% for 21 hours, all the chip samples were simulated to have been exposed in air without N2 cabinet storage or MBB bag storage for 1 year. This HAST test result showed none of exhibition of discoloration or existed discoloration chips being deteriorated. Another storage test based on regular full wafer FOSB storage showed existed discoloration chips being deteriorated. This FOSB storage test indicated the source of corrosive F element maybe come from wafer itself. The EDS element mapping data indicated the F element enriched Al pad on wafer extreme edge area was clearly identified. The source of F element was found. And the storage of processed wafer would play a key role in the formation of discoloration corrosion.
铝衬垫和晶圆存储的探针标记变色
本文在Al衬垫上发现了一种新型探针标记物变色腐蚀,其形状为甜甜圈/圆形。该探针标记在蓝带阶段出现变色腐蚀。回去检查晶圆工艺,在CP探测测试前没有发现明显的腐蚀。采用SEM/EDS、TEM/EELS和AES等分析方法对该探针标记变色腐蚀的微观结构和组成进行了鉴定。这些结构和表面分析结果表明,这种变色是铝、氟和氧的结合。铝垫正常区未检出氟化物。这些结果暗示了氟元素在诱导探针标记物变色腐蚀中的作用。在这种情况下,F元素的来源至关重要,因此测试和储存条件对探针标记物变色腐蚀的形成至关重要。在温度130℃,相对湿度85%的条件下进行了21小时的HAST测试,模拟所有芯片样品在没有N2柜或MBB袋储存的情况下暴露在空气中1年。此HAST测试结果显示没有任何变色的迹象或存在的变色芯片正在恶化。另一项基于常规全晶圆FOSB存储的存储测试显示,存在的变色芯片正在变质。FOSB储存试验表明,腐蚀F元素的来源可能来自硅片本身。能谱图表明,在晶圆极缘区域可以清晰地识别出富F元素的Al衬垫。找到了F元素的来源。而加工后硅片的贮存对变色腐蚀的形成起着关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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