Semiconducting Indium Oxide Sensor for Oxygen Detection

W. P. Sari, S. Agbroko, J. Covington
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引用次数: 1

Abstract

Industrialization produces detrimental effects for the environment, one of which is polluting the air that we breath in. To monitor the quality of air, we proposed the fabrication of semiconducting metal oxide based gas sensor. Indium oxide materials were investigated for oxygen sensing in dry environment. The sensing materials were deposited onto alumina sensor substrates in 2 steps which is spin coating of the sensing material followed by a photolithographic process to define the sensing area. The sensors were tested in temperature ranging from 200-250°C and showed a good response to oxygen with the highest performance observed at 300°C (Rg/Ra = 5.5). In this work, we evaluated the effect of annealing temperature and operating performance on sensors performance.
用于氧检测的半导体氧化铟传感器
工业化对环境产生了有害的影响,其中之一就是污染了我们呼吸的空气。为了监测空气质量,我们提出制造半导体金属氧化物气体传感器。研究了氧化铟材料在干燥环境下的氧传感性能。将传感材料沉积在氧化铝传感器基板上,分两个步骤,即传感材料的自旋涂层和光刻工艺,以确定传感区域。在200-250°C的温度范围内对传感器进行了测试,结果表明传感器对氧气的响应良好,在300°C (Rg/Ra = 5.5)时性能最高。在这项工作中,我们评估了退火温度和操作性能对传感器性能的影响。
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