{"title":"A smart power IC for high side driver applications","authors":"Y. Droinet","doi":"10.1109/EUASIC.1991.212900","DOIUrl":null,"url":null,"abstract":"New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure at system level. This paper also presents the new power BICMOS technology used for this design.<<ETX>>","PeriodicalId":118990,"journal":{"name":"Euro ASIC '91","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro ASIC '91","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUASIC.1991.212900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure at system level. This paper also presents the new power BICMOS technology used for this design.<>