A 1500 V IGBT with a self-aligned DMOS structure for high resolution CRT operated up to 100 kHz

Abstract

The authors present a 1500 V insulated gate bipolar transistor (IGBT) with a self-aligned DMOS structure (SA-DMOS) using a phosphosilicate glass (PSG) sidewall for a horizontal deflection output transistor in a high-resolution CRT (cathode ray tube). The scaled-down MOS structure, such as the SA-DMOS with a 5 mu m distance between the polysilicon gates, was useful for even a high blocking voltage IGBT to realize a low forward voltage drop and small turn-off loss. A 1500 V SA-DMOS IGBT having a chip size of 8*8 mm/sup 2/, a forward voltage drop of 4.0 V at a forward current of 6 A, and a turn-off loss of 33 mu J has been fabricated. The power loss of the SA-DMOS IGBT was 2.5 times lower than that of a conventional power MOSFET at a high frequency of up to 100 kHz.<>