Vapor pressure prediction for stacked-chip packages in reflow by convection-diffusion model

Jeremy J. Adams, Liangbiao Chen, Xuejun Fan
{"title":"Vapor pressure prediction for stacked-chip packages in reflow by convection-diffusion model","authors":"Jeremy J. Adams, Liangbiao Chen, Xuejun Fan","doi":"10.1109/EUROSIME.2015.7103113","DOIUrl":null,"url":null,"abstract":"Moisture plays a critical role in the reliability of electronic devices, especially in the desorption process at reflow temperatures (around 270° C) when severe damages may occur due to high-pressure vapor concerted from condensed moisture. Such pressure-driven vapor flow, however, could not be described by conventional Fick's Law. Furthermore, using conventional Fick's Law for multi-materials always encounters interface discontinuity issues. Therefore, this paper adopts a Convection-Diffusion Model that is able to describe complex desorption behavior in a multi-material media without the discontinuity issue. Both pressure gradient-driven (convection) and concentration-gradient driven (diffusion) moisture transports are considered in the model. To achieve this, absorbed moisture is partitioned into vapor phase and liquid phase (condensed water), with the vapor flux governed by Darcy's Law and the water flux by Fick's Law. Henry's Law is also implemented so that the Fickian term is converted to pressure, resulting in a unified vapor pressure model. The model is applied to analyze a stacked-chip package by two numerical cases: desorption under 2 typical reflow temperature profiles. Numerical validations are also performed to show that the Convection-Diffusion Model can be reduced to traditional Fickian Model and Convection-Only Model as special cases. The numerical results show that the concentration desorption rate is much faster than that of the traditional Fickian diffusion, and somewhat faster than the Convection Model, this results in a much lower pressure in the material. However, the desorption profile with time and the pressures at low temperatures of the different models- the Convection-Only, Diffusion-only and the Convection-Diffusion Model are indistinguishable which can be seen in both reflow profiles. The sensitivity of the CD Model to the gas permeability k and the reflow temperature profiles governs the maximum pressure that is predicted as well as the concentration content.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2015.7103113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Moisture plays a critical role in the reliability of electronic devices, especially in the desorption process at reflow temperatures (around 270° C) when severe damages may occur due to high-pressure vapor concerted from condensed moisture. Such pressure-driven vapor flow, however, could not be described by conventional Fick's Law. Furthermore, using conventional Fick's Law for multi-materials always encounters interface discontinuity issues. Therefore, this paper adopts a Convection-Diffusion Model that is able to describe complex desorption behavior in a multi-material media without the discontinuity issue. Both pressure gradient-driven (convection) and concentration-gradient driven (diffusion) moisture transports are considered in the model. To achieve this, absorbed moisture is partitioned into vapor phase and liquid phase (condensed water), with the vapor flux governed by Darcy's Law and the water flux by Fick's Law. Henry's Law is also implemented so that the Fickian term is converted to pressure, resulting in a unified vapor pressure model. The model is applied to analyze a stacked-chip package by two numerical cases: desorption under 2 typical reflow temperature profiles. Numerical validations are also performed to show that the Convection-Diffusion Model can be reduced to traditional Fickian Model and Convection-Only Model as special cases. The numerical results show that the concentration desorption rate is much faster than that of the traditional Fickian diffusion, and somewhat faster than the Convection Model, this results in a much lower pressure in the material. However, the desorption profile with time and the pressures at low temperatures of the different models- the Convection-Only, Diffusion-only and the Convection-Diffusion Model are indistinguishable which can be seen in both reflow profiles. The sensitivity of the CD Model to the gas permeability k and the reflow temperature profiles governs the maximum pressure that is predicted as well as the concentration content.
用对流-扩散模型预测叠片封装回流中的蒸汽压
水分在电子设备的可靠性中起着至关重要的作用,特别是在回流温度(约270°C)下的解吸过程中,冷凝水分产生的高压蒸汽可能会造成严重损害。然而,这种压力驱动的蒸汽流动不能用传统的菲克定律来描述。此外,在多材料中使用传统的菲克定律往往会遇到界面不连续问题。因此,本文采用了一种对流-扩散模型,该模型能够描述多材料介质中复杂的解吸行为,而不存在不连续问题。该模型同时考虑了压力梯度驱动(对流)和浓度梯度驱动(扩散)的水汽输送。为了达到这一目的,吸收的水分被分为气相和液相(冷凝水),蒸汽通量由达西定律控制,水通量由菲克定律控制。亨利定律也得以实施,使得菲克项转化为压力,从而得到统一的蒸汽压模型。通过两种典型回流温度分布下的解吸两种数值情况,应用该模型对叠片封装进行了分析。数值验证表明,在特殊情况下,对流扩散模型可以简化为传统的菲克模型和纯对流模型。数值结果表明,浓度解吸速率比传统的菲克扩散模型快得多,比对流模型快得多,这使得物料中的压力大大降低。然而,在不同的回流模型中,仅对流、仅扩散和对流-扩散模型的脱附曲线随时间和低温压力的变化是难以区分的,这在两种回流模型中都可以看到。CD模型对渗透率k和回流温度曲线的敏感性决定了预测的最大压力和浓度含量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信