A C-Band Power Amplifier with Over-Neutralization Technique and Coupled-Line MCR Matching Methods for 5G Communication in 0.25-μm GaAs

Abstract

Wireless communication requires high transmission accuracy. To improve accuracy, high output power amplifier is needed in transmitter. In this paper, a C-band power amplifier with over-neutralization technique and coupled-line based Magnetic-Coupled Resonator (MCR) matching method is implemented in 0.25-μm GaAs technology. With the proposed matching method, the amplifier consumes a chip size of 1.88 mm2 including DC and RF pads, which is small for GaAs technology. Simulation results show the PA achieves 30-dB gain across 5.5-7 GHz with output power of 30-dBm.