SRAM methodology for yield and power efficiency: per-element selectable supplies and memory reconfiguration schemes

R. Kanj, R. Joshi, Zhuo Li, J. B. Kuang, H. Ngo, Nancy Y. Zhou, Weiping Shi, S. Nassif
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引用次数: 2

Abstract

We present a novel power-aware yield enhancement design methodology and reconfiguration scheme for deep submicron SRAM designs. We show that with the continued trend of raising array supply to counter process variations, it is more effective to use a per-element selectable virtual power-supply scenario as opposed to single array supply with traditional redundancy schemes. The element can be a bank, a sub-array, or an independent row/column, and the element's virtual supply value is determined based on fail bitmaps. The technique can also be used in conjunction with traditional redundancy schemes to further improve the efficiency. The supply and redundancy assignments can be obtained by relying on memory reconfiguration algorithms. For this, we propose a greedy yet accurate algorithm that runs in O(nlogn) as opposed to average case O(n2) traditional algorithms. The methodology leads to significant power savings ranging from 20% to 50% for 65 nm technology. We expect the savings to increase in future technologies as leakage powers dominate. To the best of our knowledge, this is the first time such a methodology is applied to SRAM designs.
产量和功率效率的SRAM方法:每元素可选供应和存储器重新配置方案
我们提出了一种新的功率感知良率增强设计方法和深亚微米SRAM设计的重构方案。我们表明,随着提高阵列供电以应对工艺变化的持续趋势,使用每个元素可选择的虚拟电源方案比使用传统冗余方案的单阵列供电更有效。元素可以是银行、子数组或独立的行/列,元素的虚拟供应值是根据失效位图确定的。该技术还可以与传统的冗余方案结合使用,进一步提高效率。通过内存重构算法,可以得到系统的供给和冗余分配。为此,我们提出了一种贪婪而精确的算法,它在O(nlogn)内运行,而不是平均情况O(n2)传统算法。该方法可为65纳米技术节省20%至50%的显著功耗。我们预计,随着泄漏功率占主导地位,未来技术的节省将会增加。据我们所知,这是第一次将这种方法应用于SRAM设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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