Influence of fin-width lateral variations of a FinFET

Abstract

We have presented that, in terms of subthreshold operation, IOFF, SS and DIBL are improved in response to higher degree of lateral thickness non-uniformity. We have shown that the linearly varying film thickness of a FinFET introduces effects comparable to small variations in overall thickness. To address the non-uniformity, a correction factor for the overall thickness based on IOFF could be employed. Due to its non-trivial effects, this thickness variation angle should be considered as a parameter in FinFET modeling in order to capture a more accurate behavior, instead of only taking the average thickness.