Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks

M. Niessner, G. Schrag, G. Wachutka, J. Iannacci
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引用次数: 11

Abstract

We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.
RF-MEMS开关在标准IC设计框架内的建模和快速仿真
我们提出了一个适合在标准IC设计框架中直接实现的静电驱动和粘滞阻尼欧姆接触RF-MEMS开关的宏观模型。在分层建模方法的基础上,系统地推导了基于物理和多能域的耦合模型。结果表明,该模型具有较好的预测RF-MEMS开关性能的能力。特别是由于不同能量域的非线性耦合而产生的效应得到了正确的再现。在可接受的计算时间内准确再现大量接触相关情况被确定为未来研究的一个问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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