A microcontroller with 100 K bytes embedded flash EEPROM

C. Kuo, T. Toms, M. Weidner, H. Choe, D. Shum, Ko-Min Chang, P. Smith
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引用次数: 1

Abstract

As application of microcontrollers to achieve a cost effective system solution becomes more pervasive, demands for higher performance and higher functional integration continue to increase for microcontrollers. Flash EEPROM with its electrical reprogrammability and high density, when integrated on chip, can provide a microcontroller with enhanced performance and versatility, and offer a more cost effective system solution. This paper presents the development of a 16 bit microcontroller with 100 Kbytes of embedded flash EEPROM, that includes a block erasable flash EEPROM module. Using the SCSG (Source-Coupled Split-Gate) flash EEPROM cell, the embedded flash memory has achieved a typical program time of 20 /spl mu/s and erase time of 20 ms. The device operates at frequency of over 25 MHz. For embedded applications, the criteria for selecting a flash EEPROM cell are different from those for a stand alone flash memory. For stand alone memory, small cell area is often the most critical factor to be considered. For embedded applications, low overall production cost of the microcontrollers with integrated flash EEPROM is often the primary concern. For this reason, a robust flash EEPROM cell that is compatible with the existing host logic process without added tight process controls is a key criterion for use in embedded applications.
带有100k字节嵌入式闪存EEPROM的微控制器
随着微控制器的应用越来越广泛,以实现具有成本效益的系统解决方案,对微控制器更高性能和更高功能集成度的需求不断增加。闪存EEPROM具有电可编程性和高密度,当集成在芯片上时,可以提供具有增强性能和多功能性的微控制器,并提供更具成本效益的系统解决方案。本文介绍了一种嵌入式100 kb闪存EEPROM的16位微控制器的开发,其中包括一个块可擦除闪存EEPROM模块。采用SCSG(源耦合分闸)闪存EEPROM单元,嵌入式闪存实现了20 /spl mu/s的典型编程时间和20 ms的擦除时间。该设备的工作频率超过25兆赫。对于嵌入式应用,选择闪存EEPROM单元的标准与选择独立闪存的标准不同。对于独立存储器,小单元面积通常是需要考虑的最关键因素。对于嵌入式应用,集成闪存EEPROM的微控制器的低总体生产成本通常是主要关注的问题。出于这个原因,一个强大的闪存EEPROM单元,与现有的主机逻辑进程兼容,而不增加严格的进程控制是在嵌入式应用中使用的关键标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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