Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

Abstract

As advanced FinFET technologies, we have developed the co-integration techniques of the TiN gated high-performance 3T- and flexible V/sub th/ 4T-FinFETs. By using the conventional reactive sputtering of TiN, the well symmetrical V/sub th/ N- and P-channel 3T-FinFETs and the high V/sub th/-controllable 4T-FinFETs using the resist etch-back process have been demonstrated. The developed technologies are attractive to materialize the high-performance and power-managed FinFET CMOS circuits.