A. Wong, P. Godoy, O. Carnu, Hao Li, Xingliang Zhao, A. Olyaei, A. Ghaffari, S. Tam, R. Winoto, Randy Tsang
{"title":"A dual core power combining digital power amplifier for 802.11b/g/n with +26.8dBm linear output power in 28nm CMOS","authors":"A. Wong, P. Godoy, O. Carnu, Hao Li, Xingliang Zhao, A. Olyaei, A. Ghaffari, S. Tam, R. Winoto, Randy Tsang","doi":"10.1109/RFIC.2017.7969050","DOIUrl":null,"url":null,"abstract":"This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.